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Program & Invited Speakers

PROGRAM & ABSTRACT BOOKLET

Invited Speakers:

I. Site Controlled Quantum Dots

Allan Bracker (NRL Washington DC, USA), Using growth anisotropy to control the position of self-assembled quantum dots
Thomas Fromherz (JKU Linz, Austria), Evolution of SiGe islands on pit-patterned substrates monitored by Ge surface diffusion
Christian Schneider (University of Würzburg, Germany), Positioning Quantum Dots on GaAs substrates: A scalable
platform for quantum emitters

II. Growth on Patterned Substrates and Nano-membranes

Fredrik Karlsson (Linköping University, Sweden), InGaN quantum dots growth on ordered GaN micropyramids
Alfonso Taboada (ETH Zürich, Switzerland), Strain relaxation of GaAs/Ge crystals on patterned Si substrates
Christoph Deneke (LLNANO, Campinas, Brazil), Nano-membranes as templates for epitaxial InAs growth

III. Nanowires

Sonia Conesa-Boj (EPFL Lausanne, Switzerland), Quantifying Defect Formation in Nanowire-based Heterostructures
Lutz Geelhaar (PDI Berlin), III-V nanowires for light emission on a Si platform
Håkon Ikaros T. Hauge (TU Eindhoven, Netherlands), Exotic crystal structure Nanowires
Gregor Koblmüller (WSI TU München, Germany), Strong infrared and THz emission from site-selective InGaAs nanowires on patterned Si
Sébastien Plissard (LAAS-CNRS, Université de Toulouse, France), InSb Nanowire Networks
Katsuhiro Tomioka (Hokkaido University, Japan), III-V nanowires on patterned Si substrates and their device applications

IV. Fundamentals: Growth, Modeling and Applications

Jean-Noël Aqua (INSP, Univ. Paris 6, France), Directed self-organization of hetero-epitaxial quantum dots : a dynamical analysis
Yasuhiko Arakawa (Tokyo University, Japan), Growth of site-controlled III-nitride semiconductor nanowire quantum dots forapplication to room-temperature single photon emitters
Sergio Bietti (University Milano-Bicocca, Italy), Droplet Epitaxy Growth of Nanostructures on Patterned and (111) Substrates
Luisa González (IMM-CNM-CSIC Madrid, Spain), Critical role of arsenic in nanoholes formation by Ga droplet epitaxy on GaAs(001)
David Jesson (University Cardiff, UK), Dynamic Aspects of Droplet epitaxy
Francesco Montalenti (University Milano-Biccoca, Italy), Continuum modeling of lattice-mismatched heteroepitaxy: intermixing, dislocations, and complex topological changes
Xin Ou (Helmholtz-Zentrum Dresden-Rossendorf), Reverse Epitaxy on Semiconductor Surfaces
Christopher Palmstrom (UCSB California, USA), Growth Mechanism and Electronic Structure of Self-Assembled Semimetallic Rare-Earth-V Nanostructures Embedded in III-V Semiconductors
Petra Reinke (University of Virginia, USA), Doping and annealing of epitaxial Ge-QDs and the wetting layer -a surface science study