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Fritz Kohlrausch Preis der Österreichischen Physikalischen Gesellschaft an Rinaldo Trotta

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Bildquelle: Robert Herbst, POINT OF VIEW (http://pov.at). ...  more of Fritz Kohlrausch Preis der Österreichischen Physikalischen Gesellschaft an Rinaldo Trotta (Titel)

Video Online: "Embedding a Single Quantum Dot into a Photonic Crystal Cavity"

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Artikel OÖNachrichten: "Rinaldo Trotta: Der 1,5-Millionen-Euro-Forscher"

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Our recent work (Nature Comm.7, 10375, 2016) on tunable entangled photons from QDs has been recently highlighted in the Laser Focus World magazine!

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Back Cover of Phys. Status Solidi A 3/2016

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Winner of Science Slam Linz and the Austrian Final in Vienna 2016: Martyna Grydlik!!!

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"Wenn es in der Physik funkt...", Artikel in der PRESSE

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Content

Publications

2016201520142013201220112010200920082007

2016

  • Lasing from Glassy Ge Quantum Dots in Crystalline Si, M. Grydlik, F. Hackl, H. Groiss, M. Glaser, A. Halilovic, T. Fromherz, W. Jantsch, F. Schäffler, M. Brehm, ACS Photonics 3, 298 - 303 (2016) http://dx.doi.org/10.1021/acsphotonics.5b00671
  • Co-Immobilization of Proteins and DNA Origami Nanoplates to Produce High-Contrast Biomolecular Nanoarrays, R. Hager, J.R. Burns, M. J. Grydlik, A. Halilovic, T. Hasengrübler, F. Schäffler, S. Howorka, Small 12, 2877 - 2884 (2016) http://dx.doi.org/10.1002/smll.201600311

2015

  • A DNA Origami Platform for Protein Interaction Analysis, V. Motsch, R. Hager, E. Sevcsik, F. Schäffler, S. Howorka, G. Schütz, Biophys. Journal 108, 99A (2015)
  • Burgers Vector Analysis of Vertical Dislocations in Ge Crystals by Large-Angle Convergent Beam Electron Diffraction, H. Groiss, M. Glaser, A. Marzegalli, F. Isa, G. Isella, L. Miglio, F. Schäffler, Microsc. Microanal. 21, 637-645 (2015), http://dx.doi.org/10.1017/S1431927615000537
  • Photoluminescence investigation of strictly ordered Ge dots grown on pit-patterned Si substrates, Moritz Brehm1,2, Martyna Grydlik, Takeshi Tayagaki, Gregor Langer, Friedrich Schäffler and Oliver G Schmidt, Nanotechnology 26, 225202 (2015) http://dx.doi.org/10.1088/0957-4484/26/22/225202
  • Optical properties of individual site-controlled Ge quantum dots, M. Grydlik, M. Brehm, T. Tayagaki, G. Langer, O.G. Schmidt, F. Schäffler, Appl. Phys. Lett. 106, 251904 (2015) http://dx.doi.org/10.1063/1.4923188
  • Nanoimprinted superlattice photonic crystal as ultraselective solar absorber, V. Rinnerbauer, E. Lausecker, F. Schäffler, P. Reininger, G. Strasser, R. D. Geil, J. D. Joannopoulos, M. Soljacic, I. Celanovic, Optica 2, 743 – 746 (2015)
  • Single SiGe quantum dots deterministically aligned to the antinodes of a photonic crystal cavity mode, M. Schatzl, F. Hackl, T. Fromherz, F. Schäffler, IEEE Proc. 12th Int. Conf. Group IV Photonics (GFP), pp. 39-40 (2015) http://dx.doi.org/10.1109/Group4.2015.7305943

2014

  • Superlattice photonic crystal as broadband solar absorber for high temperature operation, Veronika Rinnerbauer, Yichen Shen, John D. Joannopoulos, Marin Soljačić, Friedrich Schäffler, and Ivan Celanovic, Opt. Express 22, A1896 – A1906 (2014), DOI: 10.1364/OE.22.0A1895
  • Commensurate germanium light emitters in silicon-on-insulator photonic crystal slabs, R. Jannesari, M. Schatzl, F. Hackl, M. Glaser, K. Hingerl, T. Fromherz and F. Schäffler, Opt. Express 22, 25426-25435 (2014), DOI: 10.1364/OE.22.025426
  • Real-time observation of nanoscale topological transitions in epitaxial PbTe/CdTe heterostructures, H. Groiss, I. Daruka, K. Koike, M. Yano, G. Hesser, G. Springholz, N. Zakharov, P. Werner and F. Schäffler, APL Mat. 2, 012105 (2014) DOI: 10.1063/1.4859775
  • Evolution and coarsening of Si-rich SiGe islands epitaxially grown at high temperatures on Si(0 0 1), M. Brehm, M. Grydlik, F. Schäffler, O.G. Schmidt, Microelec. Eng. 125, 22 – 27 (2014) DOI: j.mee.2013.11.002
  • Influence of composition and substrate miscut on the evolution of {105}-terminated in-plane Si1.xGex quantum wires on Si(001), H. Watzinger, M. Glaser, J.J. Zhang, I. Daruka, F. Schäffler, APL Mat. 2, 076102 (2014), DOI: 1.4886218
  • Self-assembled in-plane Ge nanowires on rib-patterned Si (1 1 10) templates, L. Du, D. Scopece, G. Springholz, F. Schäffler, G. Chen, Phys. Rev. B 90, 075308 (2014), DOI: PhysRevB.90.075308

2013

  • Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates, M. Grydlik, G. Langer, T. Fromherz, F. Schäffler, M. Brehm, Nanotechnology 24, 105601 (2013) DOI: 10.1088/0957-4484/24/10/105601
  • Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning, A. Marzegalli, F. Isa, H. Groiss, E. Müller, C. V. Falub, A. G. Taboada, P. Niedermann, G. Isella, F. Schäffler, F. Montalenti, H. von Känel, L. Miglio, Adv. Mat. 25, 4408 - 4412 (2013), DOI:10.1002/adma.201300550
  • Unrolling the evolution kinetics of ordered SiGe islands via Ge surface diffusion, M. Grydlik, M. Brehm, F. Hackl, F. Schäffler, G. Bauer, and T. Fromherz, Phys. Rev. B B88B, 115311 (2013) DOI: 10.1103/PhysRevB.88.115311

2012

  • "Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001)"
    Martyna Grydlik, Francesca Boioli, Heiko Groiss, Riccardo Gatti, Moritz Brehm, Francesco Montalenti, Benoit Devincre, Friedrich Schäffler and Leo Miglio
    Appl. Phys. Lett.101,013119 (2012) DOI: 10.1063/1.4733479

  • "One-Dimensional to Three-Dimensional Ripple-to-Dome Transition for SiGe on Vicinal Si (1 1 10)"
    B. Sanduijav, D. Scopece, D. Matei, G. Chen1, F. Schäffler1, L. Miglio, and G. Springholz
    Phys. Rev. Lett. 109,025505 (2012) DOI: 10.1103/PhysRevLett.109.025505

  • "Nanoscale DNA Tetrahedra Improve Biomolecular Recognition on Patterned Surfaces"
    Robert Schlapak, Jürgen Danzberger, David Armitage, David Morgan, Andreas Ebner, Peter Hinterdorfer, Philipp Pollheimer, Hermann J. Gruber, Friedrich Schäffler and Stefan Howorka
    SMALL 8,89-97 (2012) DOI: 10.1002/smll.201101576

  • "Painting with Biomolecules at the Nanoscale: Biofunctionalization with Tunable Surface Densities"
    Robert Schlapak, Jürgen Danzberger, Thomas Haselgrübler, Peter Hinterdorfer, Friedrich Schäffler and Stefan Howorka
    Nano Lett. 12,1983-1989 (2012) DOI: 10.1021/nl2045414

  • "Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pits"
    Martyna Grydlik, Moritz Brehm and Friedrich Schäffler
    Nanoscale Research Lett. 7,601 (2012) DOI: 10.1186/1556-276X-7-601

    
  • 2011

  • "Self-aligned fabrication of in-plane SiGe nanowires on rib-patterned Si (001) substrates"
    G. Chen, G. Springholz, W. Jantsch, and Schäffler
    Appl. Phys. Lett. 99, 043103 (2011)

  • "Gettering and Defect Engineering in Semiconductor Technology XIV"
    W. Jantsch and F. Schäffler (eds.)
    Solid State Phenomena Vol. 178- 179, Trans Tech Publications Ltd, Switzerland 2011

  • "Enhanced intermixing in Ge nanoprisms on groove-patterned Si(1110) substrates"
    G. Chen, G. Vastola, J. J. Zhang, B. Sanduijav, G. Springholz, W. Jantsch and F. Schäffler
    Appl. Phys. Lett. 98, 023104 (2011)

  • "Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si(001) substrates"
    F. Hackl, M. Grydlik, M. Brehm, H. Groiss, F. Schäffler, T. Fromherz and G. Bauer
    Nanotechnol. 22, 165302 (2011)

  • "Transport properties of SiGe nanostructures and applications in devices"
    F. Schäffler
    Chapter 15 in SiGe Nanostructures, edited by Y. Shiraki and N. Usami, Woodhead Publishing, Philadelphia, pp. 399 – 428 (2011)

  • "UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays"
    E. Lausecker, M. Brehm, M. Grydlik, F. Hackl, I. Bergmair, M. Mühlberger, T. Fromherz, F. Schäffler and G. Bauer
    Appl. Phys. Lett. 98, 143101 (2011)

  • "Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates"
    R. Gatti, F. Boioli, M. Grydlik, M. Brehm, H. Groiss, M. Glaser, F. Montalenti, T. Fromherz, F. Schäffler and Leo Miglio
    Appl. Phys. Lett. 98, 121908 (2011)

  • "Surfactant-mediated Si quantum dot formation on Ge(001)"
    D. Pachinger, H. Groiss, M. Teuchtmann, G. Hesser and F. Schäffler
    Appl. Phys. Lett. 98, 223104 (2011)

  • "The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer"
    M. Brehm, M. Grydlik, H. Groiss, F. Hackl, F. Schäffler, T. Fromherz and G. Bauer
    J. Appl. Phys. 109, 123505 (2011)

  • 2010

  • "Self-assembled Si0.80 Ge0.20 nanoripples on Si(1 1 10) substrates"
    G. Chen, E. Wintersberger, G. Vastola, H. Groiss, J. Stangl, W. Jantsch and F. Schäffler
    Appl. Phys. Lett. 96, 103107 (2010)

  • "Intersubband optoelectronics in the InGaAs/GaAsSb material system"
    H. Detz, A. M. Andrews, M. Nobile, P. Klang, E. Mujagić, G. Hesser, W. Schrenk, F. Schäffler and G. Strasser
    J. Vac. Sci. Technol. B 28, C3G19 (2010)

  • "Stability of polar semiconductor heterostructures"
    R. Leitsmann, F. Bechstedt, H. Groiss and F. Schäffler
    Phys. Stat Sol. 7, 244 - 247 (2010)

  • "Strain engineering in Si via closely stacked, site-controlled SiGe islands"
    J. J. Zhang, N. Hrauda, H. Groiss, A. Rastelli, J. Stangl, F. Schäffler, O. G. Schmidt and G. Bauer
    Appl. Phys. Lett. 96, 193101 (2010)

  • "Inverted Ge islands in {111} faceted Si pits - a novel approach towards SiGe islands with higher aspect ratio"
    M. Grydlik, M. Brehm, F. Hackl, H. Groiss, T. Fromherz, F. Schäffler and G. Bauer
    New J. Phys. 12, 063002 (2010)

  • "Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing"
    J. J. Zhang, F. Montalenti, A. Rastelli, N. Hrauda, D. Scopece, H. Groiss, J. Stangl, F. Pezzoli, F. Schäffler, O. G. Schmidt, L. Miglio and G. Bauer
    Phys. Rev. Lett. 105, 166102 (2010)

  • 2009

  • "Enhanced Relaxation and Intermixing in Ge Islands Grown on Pit-Patterned Si(001) Substrates"
    T. U. Schülli, G. Vastola, M.-I. Richard, A. Malachias, G. Renaud, F. Uhlík, F. Montalenti, G. Chen, L. Miglio, F. Schäffler and G. Bauer
    Phys. Rev. Lett. 102, 025502 (2009)

  • "Combined structural and photoluminescence study of SiGe islands on Si substrates: comparison with realistic energy level calculations"
    M. Brehm, T. Suzuki, T. Fromherz, Z. Zhong, N. Hrauda, F. Hackl, J. Stangl, F. Schäffler and G. Bauer
    New Journal of Physics 11, 063021 (2009)

  • "Coherent {001} interfaces between rocksalt and zinc-blende crystal structures"
    H. Groiss, G. Hesser, W. Heiss, F. Schäffler, R. Leitsmann, F. Bechstedt, K. Koike and M. Yano
    Phys. Rev. B 79, 235331 (2009)
    Virtual Journal of Nanoscale Science & Technology 20, Issue 1 (2009)

  • "Exchange-Coupled Bimagnetic Wüstite/Metal Ferrite Core/Shell Nanocrystals: Size, Shape, and Compositional Control"
    M. I. Bodnarchuk, M. V. Kovalenko, H. Groiss, R. Resel, M. Reissner, G. Hesser, R. T. Lechner, W. Steiner, F. Schäffler and W. Heiss
    Small 5, 2247-2252 (2009)

  • "PbTe and SnTe quantum dot precipitates in a CdTe matrix fabricated by ion implantation"
    E. Kaufmann, T. Schwarzl, H. Groiss, G. Hesser, F. Schäffler, L. Palmetshofer, G. Springholz and W. Heiss
    Applied Physics Letters 106, 043105 (2009)

  • "Shaping site-controlled uniform arrays of SiGe/Si(001) islands by in situ annealing"
    J. J. Zhang, A. Rastelli, H. Groiss, J. Tersoff, F. Schäffler, O.G. Schmidt and G. Bauer
    Applied Physics Letters 95, 183102 (2009)

  • "Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset"
    M. Brehm, F. Montalenti, M. Grydlik, G. Vastola, H. Lichtenberger, N. Hrauda, M. J. Beck, T. Fromherz, F. Schäffler, L. Miglio and G. Bauer
    Phys. Rev. B 80, 205321 (2009)

  • "Si rib waveguide photodetector with an ordered array of Ge islands for 1.5 µm"
    V. Lavchiev, R. Holly, G. Chen, F. Schäffler, R. Goldhahn and W. Jantsch
    Optics Letters 34, 3785-3787 (2009)

  • 2008

  • "Size-controlled quantum dots fabricated by precipitation of epitaxially grown, immiscible semiconductor heterostructures"
    H. Groiss, E.Kaufmann, G. Springholz, T. Schwarzl, G. Hesser, F. Schäffler, W. Heiss, K. Koike, T. Ikatura, T. Hotei, M. Yano and T. Wojtowicz
    J. Phys.: Cond. Mat. 20, 454216 (4pp) (2008)

  • "Exciton condensation in the compressively strained SiGe layers of Si/SiGe/Si heterostructure"
    T.M. Burbaev, V.S. Bagaev, E.A. Bobrik, V.A. Kurbatov, A.V. Novikov, M.M. Rzaev, N.N. Sibeldin, F. Schäffler, V.A. Tsvetkov, A.G. Tarakanov, and V.V. Zaitsev
    Thin Solid Films 517, 55-56 (2008)

  • "In situ scanning tunnelling microscopy investigations of Si epitaxial growth on pit-patterned Si (001) substrates"
    B. Sanduijav, D. Matei, G. Chen, F. Schäffler, G. Bauer, and G. Springholz
    Thin Solid Films 517,, 293-296 (2008)

  • "MBE growth conditions for Si island formation on Ge (001) substrates"
    D. Pachinger, H. Lichtenberger, G. Chen, J. Stangl, G. Hesser, and F. Schäffler
    Thin Solid Films 517, 62-64 (2008)

  • "Energy transfer in close-packed PbS nanocrystal films"
    Rinnerbauer, H.-J. Egelhaaf, K. Hingerl, P. Zimmer, S. Werner, T. Warming, A. Hoffmann, M. Kovalenko, W. Heiss, G. Hesser, and F. Schäffler
    Phys. Rev. B 77, 085322 (2008)

  • "Ordering of Ge islands on hill-patterned Si (001) templates"
    Gang Chen, G. Vastola, H. Lichtenberger, D. Pachinger, G. Bauer, W. Jantsch, F. Schäffler, and Leo Miglio
    Applied Physics Letters 92, 113106 (2008)

  • "Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration"
    M. Brehm, T. Suzuki, Z. Zhong, T. Fromherz, J. Stangl, G. Hesser, S. Birner, F. Schäffler, and G. Bauer
    Microelectronics Journal 39, 485-488 (2008)

  • "InAs/AlGaAs QDs for intersubband devices"
    M. Schramboeck, A.M. Andrews, P. Klang, W. Schrenk, G. Hesser, F. Schäffler, and G. Strasser
    Superlattices and Microstructures 44, 411-415 (2008)

  • "Thermal precipitation of self-organized PbTe quantum dots in CdTe host matrix"
    K. Koike, T. Itakura, T. Hotei, M Yano, H. Groiss, G. Hesser, and F. Schäffler
    physica status solidi (c) 5, 2746-2749 (2008)

  • "Quantitative determination of Ge profiles across SiGe wetting layers on Si (001)"
    M. Brehm, M. Grydlik, H. Lichtenberger, T. Fromherz, N. Hrauda, W. Jantsch, F. Schäffler, and G. Bauer
    Applied Physics Letters 93, 121901 (2008)


  • 2007


  • "Stranski-Krastanow growth of tensile strained Si islands on Ge (001)"
    D. Pachinger, H. Groiss, H. Lichtenberger, J. Stangl, G. Hesser, and F. Schäffler
    Applied Physics Letters 91, 233106 (2007)

  • "Size control and midinfrared emission of epitaxial PbTe/CdTe quantum dot precipitates grown by molecular beam epitaxy"
    H. Groiss, E. Kaufmann, G. Springholz, T. Schwarzl, G. Hesser, F. Schäffler, W. Heiss, K. Koike, T.Itakura, T. Hotei, M. Yano, T. Wojtowicz
    Applied Physics Letters 91, 222106 (2007)

  • "Physics of Semiconductors, Proc. 28th Int. Conf. on the Physics of Semiconductors"
    W. Jantsch, F. Schäffler (eds.)
    AIP Conference Proceedings Vol. 893, ISBN 978-0-7354-0397-0, American Institute of Physics, Melville, NY 2007

  • "Self - Organized Si Dots On Ge Substrates"
    D. Pachinger, H. Lichtenberger, and F. Schäffler
    AIP Conf. Proc. 893, 87 (2007)

  • "Electron-Hole Liquid in Si/SiGe Heterostructures"
    T. M. Burbaev, V. A. Kurbatov, H. Lichtenberger, M. M. Rzaev, N. N. Sibeldin, F. Schäffler, and V. A. Tsvetkov
    AIP Conf. Proc. 893, 441 (2007)

  • "Ordering of Strained Ge Islands on Prepatterned Si(001) Substrates: Morphological Evolution and Nucleation Mechanisms"
    G. Chen, H. Lichtenberger, G. Bauer, W. Jantsch, and F. Schäffler
    AIP Conf. Proc. 893, 39 (2007)

  • "Spin relaxation in SiGe islands"
    H. Malissa, W. Jantsch, G. Chen, H. Lichtenberger, T. Fromherz, F. Schäffler, G. Bauer, A. Tyryshkin, S. Lyon, and Z. Wilamowski
    AIP Conf. Proc. 893, 1317 (2007)

  • "Fatty Acid Salts as Stabilizers in Size- and Shape-Controlled Nanocrystal Synthesis: The Case of Inverse Spinel Iron Oxide"
    M. V. Kovalenko, M. I. Bodnarchuk, R. T. Lechner, G. Hesser, F. Schäffler, and W. Heiss
    J. Am. Chem. Soc. 129, 6352-6353 (2007)

  • "Electron-hole liquid in strained SiGe layers of silicon heterostructures"
    T. M. Burbaev, E. A. Bobrik, V. A. Kurbatov, M. M. Rzaev, N. N. Sibel'din, V. A. Tsvetkov and F. Schäffler
    JETP Lett. 85, 331-334 (2007)

  • "Photoluminescence characterization of PbTe/CdTe quantum dots grown by lattice-type mismatched epitaxy"
    K. Koike, H. Harada, T. Itakura, M. Yano, W. Heiss, H. Groiss, E. Kaufmann, G. Hesser, and F. Schäffler
    J. Crystal Growth 301-302, 722-725 (2007)

  • "The coherent {100} and {110} interfaces between rocksalt-PbTe and zincblende-CdTe"
    H. Groiss, W. Heiss, F. Schäffler, R. Leitsmann, F. Bechstedt, K. Koike, H. Harada, and M. Yano
    J. Crystal Growth 301-302, 671-675 (2007)

  • "Delayed Plastic Relaxation on Patterned Si Substrates: Coherent SiGe Pyramids with Dominant {111} Facets"
    Z. Zhong, W. Schwinger, F. Schäffler, G. Bauer, G. Vastola, F. Montalenti, and L. Miglio
    Phys. Rev. Lett. 98, 176102 (2007)

  • "Pure spin currents induced by spin-dependent scattering processes in SiGe quantum well structures"
    S.D. Ganichev, S.N. Danilov, V.V. Bel'kov, S. Giglberger, S.A. Tarasenko, E.L. Ivchenko, D. Weiss, W. Jantsch, F. Schäffler, D. Gruber, and W. Prettl
    Phys. Rev B 75, 155317 (2007)

  • "g-Factor Tuning and Manipulation of Spins by an Electric Current"
    Z. Wilamowski, H. Malissa, F. Schääffler, and W. Jantsch
    Phys. Rev. Lett. 98, 187203 (2007)

  • "Quantum dots with coherent interfaces between rocksalt-PbTe and zincblende-CdTe"
    W. Heiss, H. Groiss, E. Kaufmann, G. Hesser, M. Böberl, G. Springholz, and F. Schäffler, R. Leitsmann, F. Bechstedt, K. Koike, H. Harada, and M. Yano
    J. Appl. Phys. 101, 081723 (2007)

  • "Linear temperature dependence of the conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition"
    K. Lai, W. Pan, D. C. Tsui, S. Lyon, M. Mühlberger, and F. Schäffler
    Phys. Rev. B 75, 033314 (2007)

  • "Lateral quantum dots in Si/SiGe realized by a Schottky split-gate technique"
    T. Berer, D. Pachinger, G. Pillwein, M. Mühlberger, H. Lichtenberger, G. Brunthaler and F. Schäffler
    Semicond. Sci. Technol. 22, S137-S139 (2007)


  • 2006


  • "Efficiency limiting morphological factors of MDMO-PPV:PCBM plastic solar cells"
    H. Hoppe, T. Glatzel, M. Niggemann, W. Schwinger, F. Schäffler, A. Hinsch, M. Ch. Lux-Steiner and N. S. Sariciftci
    Thin Solid Films 511-512, 587-592 (2006)

  • "Colloidal HgTe Nanocrystals with Widely Tunable Narrow Band Gap Energies: From Telecommunications to Molecular Vibrations"
    M. V. Kovalenko, E. Kaufmann, D. Pachinger, J. Roither, M. Huber, J. Stangl, G. Hesser, F. Schäffler and W. Heiss
    J. Am. Chem. Soc. 128, 3516-3517 (2006)

  • Feature Article: "Self-assembled Si and SiGe nanostructures: New growth concepts and structural analysis"
    G. Bauer and F. Schäffler
    Phys. stat. sol. (a) 203, 3496-3505 (2006)

  • "Highly luminescent nanocrystal quantum dots fabricated by lattice-type mismatched epitaxy"
    W. Heiss, E. Kaufmann, M. Böberl, T. Schwarzl, G. Springholz, G. Hesser, F. Schäffler, K. Koike, H. Harada and M. Yano
    Physica E: Low-dimensional Systems and Nanostructures 35, 241-245 (2006)

  • "Electron spin coherence in Si"
    A. M. Tyryshkin, S. A. Lyon, T. Schenkel, J. Bokor, J. Chu, W. Jantsch, F. Schäffler, J. L. Truitt, S. N. Coppersmith and M. A. Eriksson
    Physica E: Low-dimensional Systems and Nanostructures 35, 257-263 (2006)

  • "Initial stage of the two-dimensional to three-dimensional transition of a strained SiGe layer on a pit-patterned Si(001) template"
    G. Chen, H. Lichtenberger, G. Bauer, W. Jantsch and F. Schäffler
    Phys. Rev. B 74, 035302 (2006)

  • "Centrosymmetric PbTe/CdTe quantum dots coherently embedded by epitaxial precipitation"
    W. Heiss, H. Groiss, E. Kaufmann, G. Hesser, M. Böberl, G. Springholz, F. Schäffler, K. Koike, H. Harada and M. Yano
    Appl. Phys. Lett. 88, 192109 (2006)

  • "Valley splitting of Si/Si1-xGex heterostructures in tilted magnetic fields"
    K. Lai, T. M. Lu, W. Pan, D. C. Tsui, S. Lyon, J. Liu, Y. H. Xie, M. Mühlberger and F. Schäffler
    Phys. Rev. B 73, 161301 (2006)

  • "Quantum Hall ferromagnetism in a two-valley strained Si quantum well"
    K. Lai, W. Pan, D.C. Tsui, S. Lyon, M. Mühlberger and F. Schäffler
    Physica E: Low-dimensional Systems and Nanostructures 34, 176-178 (2006)

  • "Single-electron transistor in strained Si/SiGe heterostructures"
    T. Berer, D. Pachinger, G. Pillwein, M. Mühlberger, H. Lichtenberger, G. Brunthaler and F. Schäffler
    Physica E: Low-dimensional Systems and Nanostructures 34, 456-459 (2006)

  • "Lateral quantum dots in Si/SiGe realized by a Schottky split-gate technique"
    T. Berer, D. Pachinger, G. Pillwein, M. Mühlberger, H. Lichtenberger, G. Brunthaler and F. Schäffler
    Appl. Phys. Lett. 88, 162112 (2006)

  • "Investigation of the spin properties of electrons in zero-dimensional SiGe structures by electron paramagnetic resonance"
    H. Malissa, W. Jantsch, G. Chen, D. Gruber, H. Lichtenberger, F. Schäffler, Z. Wilamowski, A. Tyryshkin and S. Lyon
    Materials Science and Engineering B 126, 172-175 (2006)

  • "Geometry dependent nucleation mechanism for SiGe islands grown on pit-patterned Si(001) substrates"
    G. Chen, H. Lichtenberger, F. Schäffler, G. Bauer and W. Jantsch
    Materials Science and Engineering C 26, 795-799 (2006)

  • "Centrosymmetric PbTe/CdTe quantum dots coherently embedded by epitaxial precipitation"
    W. Heiss, H. Groiss, E. Kaufmann, G. Hesser, M. Böberl, G. Springholz, F. Schäffler, K. Koike, H. Harada, M. Yano
    cond-mat/0602516

  • "Thermally Stimulated Relaxation of Misfit Strains in Si1-xGex/Si(100) Heterostructures with Different Buffer Layers"
    T. G. Yugova, M. G. Mil'vidski, M. M. Rzaev, and F. Schäffler
    Surface and Thin Films 50, 1099-1106 (2006)

  • "Growth, structural and optical studies of CdSe/ZnSe nanostructures grown by MBE on GaAs and Si substrates"
    M. M. Rzaev, I. P. Kazakov, V. I. Kozlovski, Y. K. Skasyrsky, E. E. Onishchenko, F. Schäffler, G. Hesser, E. M. Pashaev and I. A. Soubbotin
    Phys. stat. sol. (c) 3, 536-539 (2006)

  • "Intervalley Gap Anomaly of Two-Dimensional Electrons in Silicon"
    K. Lai, W. Pan, D. C. Tsui, S. Lyon, M. Mühlberger, and F. Schäffler
    Phys. Rev. Lett. 96, 076805 (2006)

  • "Ordered SiGe islands on vicinal and pre-patterned Si(001) substrates"
    Z. Zhong, H. Lichtenberger, G. Chen, M. Mühlberger, C. Schelling, J. Myslivecek, A. Halilovic, J. Stangl, G. Bauer, W. Jantsch and F. Schäffler
    Microelectronic Engineering 83, 1730-1735 (2006)

  • "g-Factor tuning of 2D electrons in double-gated Si/SiGe quantum wells"
    D. Gruber, D. Pachinger, H. Malissa, M. Mühlberger, H. Lichtenberger, W. Jantsch and F. Schäffler
    Physica E: Low-dimensional Systems and Nanostructures 32, 254-257 (2006)

  • "Design and fabrication of a SiGe double quantum well structure for g-factor tuning"
    H. Malissa, D. Gruber, D. Pachinger, F. Schäffler, W. Jantsch and Z. Wilamowski
    Superlattices and Microstructures 39, 414-420 (2006)

  • 2005


  • "Ordering of Si0.55Ge0.45 Islands on Vicinal Si(001) Substrates: The Interplay between Kinetic Step Bunching and Strain-Driven Island Growth"
    H. Lichtenberger, M. Mühlberger and F. Schäffler
    Appl. Phys. Lett. 86, 131919 (2005)

  • "Spin Manipulation of Free Two-Dimensional Electrons in Si/SiGe Quantum Wells"
    A. M. Tyryshkin, S. A. Lyon, W. Jantsch and F. Schäffler
    Phys. Rev. Lett. 94, 126802 (2005)

  • "Morphological Transformation of a Germanium Layer Grown on a Silicon Surface by Molecular-Beam Epitaxy at Low Temperatures"
    T. M. Burbaev, V. A. Kurbatov, M. M. Rzaev, A. O. Pogosov, N. N. Sibel'din, V. A. Tsvetkov, H. Lichtenberger, F. Schäffler, J. P. Leitao, N. A. Sobolev and M. C. Carmo
    Phys. Solid State 47, 71 (2005)

  • "Non-destructive quantitative analysis of the Ge concentration in SiGe quantum wells by means of low energy RBS"
    M. Draxler, M. Mühlberger, F. Schäffler and P. Bauer
    Nucl. Inst. Meth. B 240, 733 - 740 (2005)

  • "Ordering of self-assembled Si0.55Ge0.45 islands on vicinal Si(0 0 1) substrates"
    H. Lichtenberger, M. Mühlberger, C. Schelling and F. Schäffler
    J. Crystal Growth 278, 78-82 (2005)

  • "Misfit dislocation nucleation and multiplication in fully strained SiGe/Si heterostructures under thermal annealing"
    M. Rzaev, F. Schäffler, V. Vdovin and T. Yugova
    Mat. Sci. Semicond. Proc. 8, 137-141 (2005)

  • "Low-temperature molecular beam epitaxy of Ge on SiK"
    J.P. Leitão, A. Fonseca, N.A. Sobolev, M.C. Carmo, N. Franco, A.D. Sequeira, T.M. Burbaev, V.A. Kurbatov, M.M. Rzaev, A.O. Pogosov, N.N. Sibeldin, V.A. Tsvetkov, H. Lichtenberger, F. Schäffler
    Mat. Sci. Semicond. Proc. 8, 35-39 (2005)

  • "Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high-mobility strained Si quantum well"
    K. Lai, W. Pan, D.C. Tsui, S.A. Lyon, M. Mühlberger, and F. Schäffler
    Phys. Rev. B 72, 081313(R) (2005)

  • "Direct measurement of the spin and valley splittings in the magnetization of a Si/SiGe quantum well in tilted magnetic fields"
    M.A. Wilde, M. Rhode, Ch. Heyn, D. Heitmann, D. Grundler, U. Zeitler, F. Schäffler, R.J. Haug
    Phys. Rev. B 72, 165429-1 - 12, (2005)

  • "Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric"
    K. Lai, P.D. Ye, W. Pan, D.C. Tsui, S.A. Lyon, M. Mühlberger, F. Schäffler
    cond-mat/0504484

  • "Single-Electron Transistor in Strained Si/SiGe Heterostructures"
    T. Berer, D. Pachinger, G. Pillwein, M. Mühlberger, H. Lichtenberger, G. Brunthaler, F. Schäffler
    cond-mat/0508260

  • "Magnetization of modulation doped Si/SiGe quantum wells in high magnetic fields"
    M. A. Wilde, M. Rhode, Ch. Heyn, F. Schäffler, U. Zeitler, R.J. Haug, D. Heitmann, and D. Grundler
    AIP Conf. Proc. 772, 467 (2005)

  • "Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric"
    K. Lai, P.D. Ye, W. Pan, D.C. Tsui, S.A. Lyon, M. Mühlberger, F. Schäffler
    Appl. Phys. Lett. 87, 142103 (2005)

  • "Nano-Crystalline Fullerene Phases in Polymer/Fullerene Bulk-Heterojunction Solar Cells: A Transmission Electron Microscopy Study"
    H. Hoppe, M. Drees, W. Schwinger, F. Schäffler and N.S. Sariciftci
    Synthetic Metals 152, 117-120 (2005)


  • /a> 2004


  • "Hybrid solar cells based on inorganic nanoclusters and conjugated polymers"
    E. Arici, H. Hoppe, F. Schäffler, D. Meissner, M.A. Malik, N.S. Sariciftci
    Thin Solid Films 451-452, 612-618 (2004)

  • "Two-dimensional lateral ordering of self-assembled Ge islands on patterned substrates
    Z. Zhong, G. Chen, J. Stangl, Th. Fromherz, F. Schäffler, G. Bauer
    Physica E 21, 588-591 (2004)

  • "Kinetic and Strain-Driven Growth Phenomena on Si(001)"
    C. Schelling, J. Myslivecek, M. Mühlberger, H. Lichtenberger, Z. Zhong, B. Voigtländer, G. Bauer, F. Schäffler
    Phys. stat. sol. (a) 201, 321-328 (2004); DOI 10.1002/pssa.200303966

  • "Growth of Ge islands on prepatterned Si(001) substrates"
    Z. Zhong, A. Halilovic, H. Lichtenberger, F. Schäffler, G. Bauer
    Physica E 23, 243-247 (2004)

  • "Transient-enhanced Si diffusion on naural-oxide-covered Si(001) nano-structures during vacuum annealing
    H. Lichtenberger, M. Mühlberger, C. Schelling, W. Schwinger, S. Senz, and F. Schäffler
    Physica E 23, 442-448 (2004)

  • "Inclined ZnO thin films produced by pulsed-laser deposition
    M. Peruzzi, J.D. Pedarnig, D. Bäuerle, W. Schwinger, F. Schäffler
    Appl. Phys. A (2004), DOI: 10.1007/s00339-004-2953-y

  • "Anisotropy of g-factor and electron spin resonance linewidth in modulation-doped SiGe quantum wells
    H. Malissa, W. Jantsch, M. Mühlberger, F. Schäffler, Z. Wilamowski, M. Draxler, P. Bauer
    Appl. Phys. Lett. 85, 1739 (2004)<

  • "Two-flux Composite Fermion Series of the Fractional Quantum Hall States in Strained Si
    K. Lai, W. Pan, D.C. Tsui, S. Lyon, M. Mühlberger, F. Schäffler
    Phys. Rev. Lett. 93, 156805 (2004)

  • 2003


  • "Evolution of shape, height, and in-plane lattice constant of Ge-rich islands during capping with Si"
    Z. Zhong, J. Stangl, F. Schäffler, G. Bauer
    Appl. Phys. Lett. 83, 3695-3697 (2003)

  • "Step bunching during Si(001) homoepitaxy caused by the surface diffusion anisotropy"
    J. Myslivecek, C. Schelling, F. Schäffler, G. Springholz, P. Smilauer, J. Krug, B. Voigtländer
    Mat. Res. Soc. Symp. Proc. Vol. 749, W1.8.1-W.1.8.6 (2003)

  • "Spin-Manipulation of Free 2-Dimensional Electrons in Si/SiGe Quantum Wells"
    A.M. Tyryshkin, S.A. Lyon, W. Jantsch, F. Schäffler
    cond-mat/0304284 (2003)

  • "Photoluminescence of self-assembled Ge islands grown on Si by MBE at low temperatures"
    M.M. Rzaev, T.M. Burbaev, V.A. Kurbativ, N.N. Melnik, M. Mühlberger, A.O.Pogosov, F. Schäffler, N.N. Sibeldin, V.A. Tsvetkov, P. Werner, N.D. Zakharov, and T.N. Zavaritskyay
    phys. stat. sol. (c) 0(4), 1262-1266 (2003)

  • "Two-dimensional periodic positioning of Ge islands on prepatterned Si(001) substrates"
    Z. Zhong, A. Halilovic, T. Fromherz, F. Schäffler, and G. Bauer
    Appl. Phys. Lett. 82(26), 4779 (2003)

  • "Positioning of self-assembled Ge islands on stripe-patterned Si(001) substrates"
    Z. Zhong, A. Halilovic, M. Mühlberger, F. Schäffler, and G. Bauer
    J. Appl. Phys. 93(10), 6258-6264 (2003)

  • "Transient-enhanced Si diffusion on native-oxide-covered Si(001) nanostructures during vacuum annealing"
    H. Lichtenberger, M. Mühlberger, and F. Schäffler
    Appl. Phys. Lett. 82(21), 3650 (2003)

  • "Step-bunching in SiGe layers and superlattices on Si(0 0 1)"
    M. Mühlberger, C. Schelling, G. Springholz and F. Schäffler
    Surf. Sci. 532-535, 721 (2003)

  • "X-ray grazing incidence study of inhomogeneous strain relaxation in Si/SiGe wires"
    A. Hesse, Y. Zhuang, V. Holý, J. Stangl, S. Zerlauth, F. Schäffler, G. Bauer, N. Darowski and U. Pietsch
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 200, 267-272 (2003)

  • "Ge island formation on stripe-patterned Si(001) subatrates"
    Z. Zhong, A. Halilovic, M. Mühlberger, F. Schäffler, G. Bauer
    Appl. Phys. Lett. 82(3), 445 (2003)

  • "Transient-Enhanced Surface Diffusion on Native-Oxide-Covered Si(001) Nano-Structures during Vacuum Annealing"
    H. Lichtenberger, M. Mühlberger, F. Schäffler
    cond-mat/0301074

  • "Spin relaxation and g-factor of two-dimensional electrons in Si/SiGe quantum wells"
    Z. Wilamowski, W. Jantsch, N. Sandersfeld, M. Mühlberger, F. Schäffler, S. Lyon
    Physica E 16, 111 (2003)

  • 2002


  • "Step bunching during Si(001) homoepitaxy caused by the surface diffusion anisotropy"
    J. Mysliveçek, C. Schelling, F. Schäffler, G. Springholz, P. Smilauer, J. Krug, B. Voigtlander
    cond-mat/0212331

  • "On the microscopic origin of the kinetic step-bunching instability on vicinal Si(001)"
    J. Mysliveçek, C. Schelling, F. Schäffler, G. Springholz, P. Smilauer, J. Krug and B. Voigtländer
    Surf. Sci. 520, 193-206 (2002)

  • "Step-bunching and strain effects in Si1-xGex layers and superlattices on vicinal Si(001)"
    M. Mühlberger, C. Schelling, G. Springholz and F. Schäffler
    Physica E 13, 2-4, 990-994 (2002)

  • "Two wave X-ray optical diagnostics of GexSi1-x/Si modulation doped heterostructures"
    A.G. Touryanski, I.V. Pirshin, M.M. Rzaev, F. Schäffler, M. Mühlberger
    Physica E 13, 2-4, 1063-1065 (2002)

  • "Fourier-transform infrared investigations of Si1-yCy structures for hetero bipolar transistor applications"
    D. Gruber, M. Mühlberger, T. Fromherz, F. Schäffler, M. Schatzmayr
    Mat. Sci. Eng. B 89, 1-3, 97-100 (2002)

  • "Step-bunching and strain-effects in Si1-xGex layers and superlattices grown on vicinal Si(001)"
    M. Mühlberger, C. Schelling, G. Springholz and F. Schäffler
    Mat. Sci. Eng. B 89, 1-3, 257-262 (2002)

  • "On the origin of the kinetic growth instability of homoepitaxy on Si(001)"
    J. Mysliveçek, C. Schelling, G. Springholz, F. Schäffler, B. Voigtländer and P. Šmilauer
    Mat. Sci. Eng. B 89, 1-3, 410-414 (2002)

  • 2001


  • "Deep-level transient spectroscopy of dislocation-related defects in epitaxial multilayer structures"
    E. Thor, M. Mühlberger, L. Palmetshofer, and F. Schäffler
    Journal of Applied Physics 90, 2252-2256 (2001)

  • "Si1-xGex growth instabilities on vicinal Si (001) substrates: kinetic vs. strain-induced effects"
    C. Schelling, M. Mühlberger, G. Springholz, F. Schäffler
    Phys. Rev. B 64, 041301(R) (2001)

  • "Screening breakdown on the route towards the metal-insulator transition in modulation-doped Si/SiGe quantum wells"
    Z. Wilamowski, N. Sandersfeld, W. Jantsch, D. Többen, F. Schäffler
    Phys. Rev. Lett. 87, 026401 (2001)

  • "Local lattice distortion in Si1-x-yGexCy epitaxial layers from x-ray absorption fine structure"
    D. De Salvador, M. Tormen, M. Berti, A.V. Drigo, F. Romanato, F, Boscherini, J. Stangl, S. Zerlauth, G. Bauer, L. Colombo, S. Mobilio
    Phys. Rev. B 63,045314 (2001)

  • "Silicon-Germanium "
    F. Schäffler
    In: Properties of Advanced Semiconductor Materials, eds. M.E. Levintshein, S.L. Rumyantsev, M.S. Shur, John Wiley & Sons, New York 2000 (chapter 6)

  • 2000


  • "Electron and hole mobilities in Si/SiGe heterostructures"
    F. Schäffler
    In: "Properties of silicon germanium and SiGe: Carbon", EMIS Data Review Series No. 24, edited by Erich Kasper and Klara Lyutovich, University of Stuttgart, Germany. INSPEC (London) 2000, p196 - 209; ISBN 0 85296 7837

  • "Screening breakdown on th route towards the metal-insulator transition in modulation-doped Si/SiGe quantum wells"
    Z. Wilamowski, N. Sandersfeld, W. Jantsch, D. Többen, F. Schäffler
    Cond-Mat/ 0010077

  • "Optical and structural properties of Si/SiGe wires grown on patterned Si substrates"
    Y. Zhuang, C. Schelling, A. Daniel, F. Schäffler, and G. Bauer
    Thin Solid Films 380, 51-53 (2000)

  • "Kinetic vs. strain-induced growth instabilities on vicinal Si(001)"
    C. Schelling, G. Springholz, F. Schäffler
    Thin Solid Films 380, 20-24 (2000)

  • "Investigation of inhomogenous in-plane strain relaxation in Si/SiGe wires by high resolution x-ray diffraction"
    Y. Zhuang, C. Schelling, T. Roch, A. Daniel, F. Schäffler, G. Bauer, J. Grenzer, U. Pietsch, S. Senz
    Applications of Synchrotron Radiation Techniques to Materials Science V, Material Research Society Proceedings 590, 207-212 (2000)

  • "Magnetoresistance Fluctuations in short n-type heterostructure wires"
    R.G. van Veen, A.H. Verbruggen, E. van der Drift, F. Schäffler, S. Radelaar
    Phys. Rev. B 61, 7545 (2000)

  • "Spin properties of the two-dimensional electron gas"
    Z. Wilamowski, W. Jantsch, N. Sandersfeld, and F. Schäffler
    Physica B 284-288, 1926-1927 (2000)

  • "Type II band alignment and exciton wavefunctions in Si/Si1-xGex quantum wells"
    C. Penn, P. C. M. Christianen, F. Schäffler, J. C. Maan, and G. Bauer
    Physica E 7, 550-554 (2000)

  • "Investigation of beta-SiC precipitation in Si1-yCy epilayers by x-ray scattering at grazing incidence"
    Z. Kovats, T. H. Metzger, J. Peisl, J. Stangl, M. Mühlberger, Y. Zhuang, F. Schäffler, and G. Bauer
    Appl. Phys. Lett. 76, 3409-3411 (2000)

  • "Structural and optical properties of Si/Si1-xGex wires"
    Y. Zhuang, C. Schelling, J. Stangl, C. Penn, S. Senz, F. Schäffler, A. Daniel, U. Pietsch, and G. Bauer
    Thin Solid Films 369, 409-413 (2000)

  • "Band ordering of the pseudomorphic Si1-xGex/Si heterostructure: the fundamental role of excitons"
    C. Penn, G. Bauer, F. Schäffler and S. Glutsch
    Thin Solid Films 369, 394-397 (2000)

  • "ESR investigations of modulation-doped Si/SiGe quantum wells"
    N. Sandersfeld, W. Jantsch, Z. Wilamowski, and F. Schäffler
    Thin Solid Films 369, 312-315 (2000)

  • "Electric and magnetic field fluctuatins in modulation-doped Si/SiGe quantum wells"
    W. Jantsch, Z. Wilamowski, N. Sandersfeld, F. Schäffler
    Physica E 6, 218-221 (2000)

  • "High-speed transport in Si/SiGeC heterostructures"
    M. Mühlberger, C. Schelling, N. Sandersfeld, H. Seyringer, and F. Schäffler
    Thin Solid Films 369, 306-311 (2000)

  • "New kinetic growth instabilities in Si(001) homoepitaxy"
    C. Schelling, G. Springholz, and F. Schäffler
    Thin Solid Films 369, 1-4 (2000)

  • "Magnetoluminescence investigations of Si/Si0.76Ge0.24 quantum wells"
    C. Penn, F. Schäffler, G. Bauer, P. C. M. Christianen, J. C. Maan, and S. Glutsch
    Phys. Rev. B 61, 13055-13059 (2000)

  • "Lattice parameter of Si1-x-yGexCy alloys"
    D. De Salvador, M. Petrovich, M. Berti, F. Romanato, E. Napolitani, A. Drigo, J. Stangl, S. Zerlauth, M. Mühlberger, F. Schäffler, G. Bauer, and P. C. Kelires
    Phys. Rev. B 61, 13005-13013 (2000)

  • "Investigation of inhomogeneous in-plane strain relaxation in Si/SiGe quantum wires by high resolution x-ray diffraction"
    Y. Zhuang, C. Schelling, T. Roch, A. Daniel, F. Schäffler, G. Bauer, J. Grenzer, U. Pietsch, and S. Senz
    Mat. Res. Soc. Symp. Proc. 590, 207-212 (2000)

  • "Exchange interaction effects in the crossing of spin-polarized Landau levels in a silicon-germanium heterostructure: transition into a ferromagnetic state"
    U. Zeitler, H.W. Schumacher, J. Regul, R.J. Haug, P. Weitz, A.G.M. Jansen and F. Schäffler
    Physica E 6, (1-4) 288-292 (2000)

  • "In-plane strain and shape analysis of Si/SiGe nanostructures by grazing incidence diffraction"
    Y. Zhuang, U. Pietsch, J.Stangl, v.Holy, N. Darowski, J. Grenzer, S, Zerlauth, F. Schäffler, G. Bauer
    Physica B 283, 130-134 (2000)

  • "Metastability of Si1-yCy epilayers under 2 MeV-particle irradiation"
    M. Berti, D. De Salvador, A.V. Drigo, M. Petrovich, J. Stangl, F. Schäffler, S. Zerlauth, G. Bauer, A. Armigliato
    Micron 31, 285-289 (2000)

  • "In-plane strain and shape analysis of Si/SiGe nanostructures by grazing incidence diffraction"
    Y. Zhuang, U. Pietsch, J. Stangl, V. Holy, N. Darowski, J. Grenzer, S. Zerlauth, F. Schäffler, and G. Bauer
    Physica B 283(1-3), 130-134 (2000)

  • 1999


  • "A fully certified SiGe-BiCMOS process for ASICs and multiproduct wafers"
    M. Schatzmayr, E. Wachmann, M. Mühlberger, C. Schelling, and F. Schäffler
    Proc. Int. Semicond. Dev. Res. Symp., Charlottesville, VA, Dec. 1999

  • "Determination of potential fluctuations in modulation-doped SiGe-quantum wells from conduction electron spin resonance"
    J.C. Portal, D.K. Maude, T. Dietl, A. Prinz, M. Sawicki, J. Jaroszynski, G. Brunthaler, F. Schäffler, G. Bauer and P. Glod
    Physica B: Condensed Matter 273-274(15), 944-946 (1999)

  • "Kinetic growth instabilities on vicinal Si(001) surfaces"
    C. Schelling, G. Springholz, and F. Schäffler
    Phys. Rev. Lett. 83, 995-998 (1999)

  • "Conduction electron spin resonance in Si/Si1-xGex quantum wells"
    W. Jantsch, Z. Wilamowski, N. Sandersfeld, and F. Schäffler
    Proc. 24th International Conference on the Physics of Semiconductors, Jerusalem 1998

  • "Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high-resolution X-ray diffraction and grazing incidence diffraction"
    Y. Zhuang, V. Holý, J. Stangl, A. A. Darhuber, P. Mikulik, S.Zerlauth, F. Schäffler, G. Bauer, N. Darowski, D. Lübbert, and U. Pietsch
    J. Phys. D: Appl. Phys. 32, A224-A229 (1999)

  • "Diffuse x-ray reflectivity of strain compensated Si/SiGe/Si:C multilayers"
    J. Grim, V. Holý, J. Stangl, A.A. Darhuber, S. Zerlauth, F. Schäffler, and G. Bauer
    J. Phys. D: Appl. Phys. 32, A216-A219 (1999)

  • "Application of numerical exciton wavefunction calculations to the question of band alignment in Si/SiGe quantum wells"
    C. Penn, F. Schäffler, G. Bauer, and S. Glutsch
    Phys. Rev. B 59, 13314-13321 (1999)

  • "Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe heterostructures"
    C.F.O. Graeff, M.S. Brandt, M. Stutzmann, M. Holzmann, G. Abstreiter, and F. Schäffler
    Phys. Rev. B 59, 13242-13250 (1999)

  • 1998


  • "Interaction Effects at the Magnetic-Field Induced Metal-Insulator Transition in Si/SiGe Superlattices"
    G. Brunthaler, T. Dietl, A. Prinz, M. Sawicki, J. Jaroszynski, P. Glód, F. Schäffler, G. Bauer, D.K. Maude, and J.C. Portal
    Solid State Comm. 106, 157-161 (1998)

  • "Lattice parameter in Si1-yCy epilayers: Deviation from Vegard's rule"
    M. Berti, D. De Salvador, A.V. Drigo, F. Romanato, J. Stangl, S. Zerlauth, F. Schäffler, and G. Bauer
    Appl. Phys. Lett. 72, 1602-1604 (1998)

  • "Strain-Relaxation and Surface Morphology of Compositional Graded Si/Si1-xGex Buffers"
    J.H. Li, G. Springholz, H. Seyringer, V. Holy, F. Schäffler, and G. Bauer
    J. Vac. Sci. Technol. B 16, 1610-1615 (1998)

  • "Substitutional Carbon Incorporation into MBE-Grown Si1-yCy Layers"
    S. Zerlauth, C. Penn, H. Seyringer, G. Brunthaler, G. Bauer, and F. Schäffler
    J. Vac. Sci. Technol. B 16, 1679-1683 (1998)

  • "Photoluminescence from Pseudomorphic Si1-yCy Layers on Si Substrate"
    C. Penn, S. Zerlauth, J. Stangl, G. Bauer, and F. Schäffler
    J. Vac. Sci. Technol. B 16, 1713-1716 (1998)

  • "Si/Si1-xGex and Si/Si1-yCy Heterostructures: Materials for High-Speed Field-Effect Transistors"
    F. Schäffler
    Thin Solid Films 321, 1-10 (1998)

  • "Molecular Beam Epitaxial Growth and Photoluminescence Investigation of Si1-x-yGexCy Layers"
    S. Zerlauth, C. Penn, H. Seyringer, J. Stangl, G. Brunthaler, G. Bauer, and F. Schäffler
    Thin Solid Films 321, 33-40 (1998)

  • "12C(a,a)12C resonant elastic scattering at 5.7 MeV as a tool for carbon quantification in silicon-based heterostructures"
    M. Berti, D. De Salvador, A.V. Drigo, F. Romanato, A. Sambo, S. Zerlauth, J. Stangl, F. Schäffler, and G. Bauer
    Nuclear Instruments and Methods B 143, 357-370 (1998)

  • "Electroreflectance Spectroscopy of Strained Si1-xGex Layers on Silicon"
    T. Ebner, K. Thonke, R. Sauer, F. Schäffler, and H.-J. Herzog
    Phys. Rev. B 57, 15448-15453 (1998)

  • "Magnetic-field induced metal-insulator transitiondue to spin effects in Si/SiGe superlattices"
    A. Prinz, G. Brunthaler, T. Dietl, M. Sawicki, J. Jaroszynski, F. Schäffler and G. Bauer
    Physica B: Condensed Matter 249-251 895-899 (1998)

  • "Coplanar and grazing incidence X-ray diffraction investigation of self-organized SiGe quantum dot multilayers"
    V. Holý, A.A. Darhuber, J. Stangl, S. Zerlauth, F. Schäffler, G. Bauer, N. Darowski, D. Lübbert, U. Pietsch, and I. Vávra
    Phys. Rev. B 58, 7934-7943 (1998)

  • "Photoluminescence from Si/Si1-xGex single quantum wells in high magnetic fields: localized and free exciton recombination"
    C. Penn, P.C.M. Christiansen, F. Schäffler, J.C. Maan, and G. Bauer
    Physica B 256-258, 363-366 (1998)

  • "Anomalous Coincidences Between Valley Split Landau Levels in a Si/SiGe Heterostructure"
    H.W. Schumacher, A. Nauen, U. Zeitler, R.J. Haug, P. Weitz, A.G.M. Jansen, and F. Schäffler
    Physica B 256-258, 260-263 (1998)

  • "ESR investigations of modulation-doped Si/SiGe quantum wells"
    W. Jantsch, Z. Wilamowski, N. Sandersfeld, and F. Schäffler
    phys. stat. sol. (b) 210, 643-648 (1998)

  • "Strong deviation of the lattice parameters in Si1-x-yGexCy epilayers from Vegard's rule"
    J. Stangl, S. Zerlauth, F. Schäffler, G. Bauer, M. Berti, D. De Salvador, A.V. Drigo, and F. Romanato
    MRS Symp. Proc. 533, 257-262 (1998)

  • 1997


  • "MBE growth and structural characterization of Si1-yCy/Si1-xGex superlattices"
    S. Zerlauth, J. Stangl, A.A. Darhuber, V. Holý, G. Bauer, and F. Schäffler
    J. Cryst. Growth 175/176, 459-464 (1997)

  • "Strain relaxation in high electron mobility Si1-xGex/Si structures"
    J.H. Li, V. Holý, G. Bauer and F. Schäffler
    J. Appl. Phys. 82, 2881-2886 (1997)

  • "Influence of thermal annealing on the photoluminescence from pseudomorphic Si1-yCy epilayers on Si"
    C. Penn, S. Zerlauth, J. Stangl, G. Bauer, G. Brunthaler, and F. Schäffler
    Appl. Phys. Lett. 71, 2172-2174 (1997)

  • "High mobility Si and Ge structures"
    F. Schäffler
    Semicond. Sci. Technol. 12, 1515-1549 (1997)

  • "Growth Conditions for Complete Substitutional Carbon Incorporation into Si1-yCy Layers Grown by Molecular Beam Epitaxy"
    S. Zerlauth, H. Seyringer, C. Penn, and F. Schäffler
    Appl. Phys. Lett. 71, 3826-3828 (1997)

  • 1996


  • "D-Band Si-IMPATT diodes with 300 mW cw output power at 140 GHz"
    M. Wollitzer, J. Buechler, F. Schäffler, and J.-F. Luy
    Electronics Lett. 32, 122-123 (1996)

  • "Metal-Insulator Transition in Sb-Doped Short Period Si/SiGe Superlattices"
    G. Stöger, G. Brunthaler, G. Bauer, J. Jaroszynski, M. Sawicki, T. Dietl, and F. Schäffler
    Solid-State Electronics 40, 47-51 (1996)

  • "Intersubband Lifetimes in Si/SiGe Quantum Wells"
    W. Heiss, E. Gornik, C.R. Pidgeon, S.-C. Lee, L. Galbraith, B. Murdin, C.J.G.M. Langerak, M. Helm, H. Hertle, and F. Schäffler
    Solid-State Electronics 40, 59-62 (1996)

  • "Quantized Conductance in a Si/Si0.7Ge0.3 Split-Gate Device and Impurity Related Magnetotransport Phenomena"
    D. Többen, D.A. Wharam, G. Abstreiter, J.P. Kotthaus, and F. Schäffler
    Solid-State Electronics 40, 405-408 (1996)

  • "Fabrication of n- and p-channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing"
    M. Holzmann, P. Baumgartner, C. Engel, J.F. Nützel, G. Abstreiter, and F. Schäffler
    Appl. Phys. Lett. 68, 3025-3027 (1996)

  • "Tilted magnetic field studies of spin- and valley-splittings in Si/Si1-xGex heterostructures"
    P. Weitz, R.J. Haug, K. von Klitzing, and F. Schäffler
    Surf. Sci. 361/362, 542-546 (1996)

  • "Magnetotransport of electrons in arrays of wires in Si/Si0.7Ge0.3 heterostructures"
    M. Holzmann, D. Többen, P. Baumgartner, G. Abstreiter, A. Kriele, H. Lorenz, and F. Schäffler
    Surf. Sci. 361/362, 673-676 (1996)

  • "Electroreflectance Spectroscopy of Strained Si1-xGex Layers on Silicon"
    T. Ebner, K. Thonke, R. Sauer, F. Schäffler, and H.J. Herzog
    Appl. Surf. Sci. 102, 90-93 (1996)

  • "Electroluminescence, photoluminescence and photocurrent studies on Si/SiGe -i-n heterostructures"
    M Förster, U. Mantz, S. Ramminger, K. Thonke, R. Sauer, H. Kibbel, F. Schäffler, and H.J. Herzog
    J. Appl. Phys. 80, 3017 (1996)

  • "Si1-xGex/Si(001) Layers under External Uniaxial Stress: Photoluminescence Studies"
    U. Mantz, B. Steck, K. Thonke, R. Sauer, F. Schäffler, and H.-J. Herzog
    Appl. Surf. Sci. 102, 314-318 (1996)

  • "Metal-insulator transition in Sb-doped short-period Si/SiGe superlattices"
    G. Brunthaler, T. Dietl, M. Sawicki, G. Stöger, J. Jaroszynski, A. Prinz, F. Schäffler, and G. Bauer
    Semicond. Sci. Technol. 11, 1624-1629 (1996)
  •