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Institute of Applied Physics
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KrF, ArF, F2
Femtosecond Ti:Sapphire (amplifier and OPO), nanosecond Nd:YAG (fundamental and higher harmonics), Fiber (white-light laser)

Reaction chambers for PLD of multicomponent oxide thin films, facilities for fabrication of ceramics used as targets for ablation.
Ion implanter at ZONA (High Voltage Engineering, NL), energy 20-400 keV, beam current density 1-500 nA/cm2, practical dose range 1010 -1017 ions/cm2, universal ion source for production of ion beams of most elements from gaseous or solid materials, universal target chamber for ion implantation at temperatures from 10 K to 300 K

three-circle XRD system

cryostats for zero-field electrical transport measurements (from 4 to 300 K)


facilities for dicing of bulk materials and micro-patterning of thin films (laser direct writing)

Further facilities are available at ZONA, opens an external URL in a new window.