KrF, ArF, F2
Femtosecond Ti:Sapphire (amplifier and OPO), nanosecond Nd:YAG (fundamental and higher harmonics), Fiber (white-light laser)
Further facilities are available at ZONA.
Excimer Lasers, Solid state Lasers, Ion Lasers, Dye Lasers
STED Lithography
2D, 3D and Dark field optical microscopy
Pulsed-laser deposition of thin films, Ion beam patterning
Reaction chambers for PLD of multicomponent oxide thin films, facilities for fabrication of ceramics used as targets for ablation.
Ion implanter at ZONA (High Voltage Engineering, NL), energy 20-400 keV, beam current density 1-500 nA/cm2, practical dose range 1010 -1017 ions/cm2, universal ion source for production of ion beams of most elements from gaseous or solid materials, universal target chamber for ion implantation at temperatures from 10 K to 300 K
X-ray diffraction
three-circle XRD system
Atomic force microscopy
Facility for characterising superconductors
cryostats for zero-field electrical transport measurements (from 4 to 300 K)
Thermogravimetry
TG, DTA
UV-VIS Spectrometers, IR Spectrometers, Monochromators
Facilities for thermal and electron beam evaporation, Sputtering
Laser cutting and micro-patterning
facilities for dicing of bulk materials and micro-patterning of thin films (laser direct writing)
Facilities for UV photolithography and chemical etching