Keynote speakers

Name, Institution Tentative Title
Christophe Maleville, Soitec, France Trends and roadmaps for engineered semiconductor substrates
Heike E. Riel, IBM Zürich, Switzerland Group-III-V on Silicon microelectronics and photonics


Invited speakers

Name, Institution Tentative Title
Gabriel Aeppli, EPFL Lausanne, ETH Zürich, Switzerland Device characterization using X-ray Microscopy and Spectroscopy at the Swiss Light Source 
Erik Bakkers, TU Eindhoven, Netherlands Direct bandgap emission from hexagonal Ge and SiGe alloys
Simona Binetti, Univ. Milano Bicocca, Italy Infrared photoluminescence of defects in crystalline and multi-crystalline Si
Magnus Borgström, Lund University, Sweden Nanowire tandem junction solar cells
Neil Curson, UCL, United Kingdom Deterministic As impurities in Silicon
Anaïs Dreau, Univ. Montpellier, France G-centers in Si as artificial atoms
Nicholas Grant, Univ. Warwick, United Kingdom Gallium doped silicon for high efficiency silicon solar cells
Antonio La Magna CNR-IMM Catania, Italy Modeling of excimer laser annealing processes in future nanoscale devices
Max Lemme, RTWH Aachen, German 2D Materials: Physics and new applications
Dominique Mangelinck, CNRS, France Challenges and issues for contacts in microelectronics
Felipe Murphy-Armando, Tyndall, Ireland Direct-gap light-emission from point defects in Germanium
Takashi Nakayama, Chiba University, Japan First principles of heterointerfaces in SiC and GaN
Tim Niewelt, Fraunhofer ISE, Germany Establishing the true limit of silicon’s performance: a multi-institutional collaboration to redefine silicon’s carrier lifetime limit
Clemens Ostermaier, Infineon Technologies

Defect aspects of C-doped GaN buffers

Fabrizio Rovaris, OMATEN center for excellence, Poland Simulation of dislocation dynamics in the presence of surfaces
Jan Schmidt, ISFH, Germany Surface passivation of crystalline silicon solar cells: Past, present and future
Alexander L. Shluger, UCL, United Kingdom Defects in oxides in Electronic devices
Hans Sigg, Paul Scherrer Institut, Switzerland Recent progress on group-IV Lasers on Silicon
Jonatan Slotte, Aalto University, Finland Positron Annihilation spectroscopy open volume defects in highly n-type doped Ge and GeSn layers
Michelle Vaqueiro Contreras, UNSW, Australia Graphene oxides as passivators for silicon surfaces
Jan Vobecky, Hitachi, ABB Power Grids, Switzerland Impact of defect engineering on high power devices for environmental free technologies
Ke Xu, Suzhou  Institute of  Nano-Tech and Nano-Bionics, CAS China Growth and Defect Engineering of Bulk GaN

(to be updated)