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Institute of Semiconductor and Solid State Physics
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Semiconductor and quantum materials epitaxy (MBE).

I. Group-IV MBE

Riber SIVA-45 solid source MBE system. The machine is dedicated to the growth of Group-IV hetero- and nanostructures. Si and Ge are deposited using electron beam evaporators, C, Sb, B, and Sn using effusion cells.

Contact person: Moritz Brehm

Riber SIVA-45 MBE

II. Group III-V MBE

MBE components Octoplus The machine is fully dedicated to the growth of (Al, Ga, In)As heterostructures for quantum science and technology. It includes two effusion cells for Ga, two for Al, one for In, a cracker cell for As and doping cells (C and Si).

Contact Person: Armando Rastelli

III-V MBE

III. Group-IV-V-VI MBE

The Varian GEN-II MBE system is equipped with effusion cells for PbTe, SnTe, Te, Bi2Te3, Mn, Eu, Sr, CdTe, PbSe, Se, and Tl2Te3 for fabrication of topological insulator and multiferroic thin films and heterostructures on various 2" substrates including BaF2, InP, GaAs, CdTe, KCl, SrF2, Si and Ge in (111) and (100) orientation. In addition, infrared device structures such as VCESLs and self-assembled quantum dots have been grown in this system.

Contact person: Gunther Springholz

Varian GEN-II MBE