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(* corresponding author)

37. J. Schuster*, J. Aberl, L. Vukusic, L. Spindlberger, H. Groiss, T. Fromherz, M. Brehm, F. Schäffler, Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots, , opens an external URL in a new windowScientific Reports 11,  20597 (2021).

36. L. Spindlberger*, M. Kim, J. Aberl, T. Fromherz, F. Schäffler, F. Fournel, J.-M. Hartmann, B. Hallam, M. Brehm, Advanced hydrogenation process applied on Ge on Si quantum dots for enhanced light emission, opens an external URL in a new window, Appl. Phys. Lett. 118, 083104 (2021).

35. F. Hackl, M. Grydlik, P. Klenovsky, F. Schäffler, T. Fromherz, and M. Brehm*, Assessing Carrier Recombination Processes in Type-II SiGe/Si(001) Quantum Dots, opens an external URL in a new window, Ann. Phys. (Berlin), 1800259 (2019).

34. P. Rauter, L. Spindlberger, F. Schaeffler, T. Fromherz, J. Freund, and M. Brehm*, Room-temperature group-IV LED based on defect-enhanced Ge quantum dots, ACS Photonics 5 , 431–438 (2018).

33. H. Groiss, M. Glaser, M. Schatzl, M. Brehm, D. Gerthsen, D. Roth, P. Bauer, and F. Schäffler, Free-running Sn precipitates: an efficient phase separation mechanism for metastable Ge1−xSnx epilayers, Scientific Reports 7, 16114 (2017).

32. M. Brehm* and M. Grydlik, Site-controlled and advanced epitaxial Ge/Si quantum dots: fabrication, properties, and applications, Nanotechnology 28, 392001 (2017).

31. M. Schatzl, F. Hackl, M. Glaser, M. Brehm, P. Rauter, A. Simbula, M. Galli, T. Fromherz, and F. Schäffler, Enhanced Telecom Emission from Single Group-IV Quantum Dots by Precise CMOS-Compatible Positioning in Photonic Crystal Cavities, ACS Photonics, 4, 665 (2017).

30. H. Groiss, L. Spindlberger, P. Oberhumer, F. Schäffler, T. Fromherz, M. Grydlik, M. Brehm*, Photoluminescence enhancement through vertical stacking of defect-engineered Ge on Si quantum dots, Semicond. Sci. Technol. 32, 02LT01 (2017).

29. M. Grydlik, M. T. Lusk, F. Hackl, A. Polimeni, T. Fromherz, W. Jantsch, F.Schäffler and M. Brehm*, Laser Level Scheme of Self-Interstitials in Epitaxial Ge Dots Encapsulated in Si, Nano Lett. 16, 6802–6807 (2016).

28. M. Grydlik, F. Hackl, H. Groiss, M. Glaser, A. Halilovic, T. Fromherz, W. Jantsch, F. Schäffler and M. Brehm*, Lasing from glassy Ge quantum dots in crystalline Si, ACS Photonics 3, 298 (2016).

27. M. Brehm, H. Groiss, G. Bauer, Y. Paltiel, R. Clarke, Y. Yacoby, Atomic structure and composition distribution in wetting layers and islands of Germanium grown on Silicon (001) substrates, Nanotechnology 26, 485702 (2015).

26. M. Grydlik, M. Brehm*, T. Tayagaki, G. Langer, O.G. Schmidt and F. Schäffler, Optical properties of individual site-controlled Ge quantum dots epitaxially grown on patterned Si(001) substrate, Appl. Phys. Lett. 106, 251904 (2015).

25. M. Brehm, M. Grydlik, T. Tayagaki, G. Langer, F. Schäffler, and O.G. Schmidt, Photoluminescence investigation of strictly ordered Ge dots grown on pit-patterned Si substrates, Nanotechnology 26, 225202 (2015).

24. J. Zhang, M. Brehm*, M. Grydlik, and O.G. Schmidt, Evolution of epitaxial semiconductor nanodots and nanowires from supersaturated wetting layers, Chem. Soc. Rev. 44, 26 (2015).

23. M. Brehm, M. Grydlik, F. Schäffler, O.G. Schmidt, Evolution and coarsening of Si-rich SiGe islands epitaxially grown at high temperatures on Si(001), Microelectronic Engineering 125, 22–27 (2014).

22. M. Grydlik, M. Brehm, F. Hackl, F. Schäffler, G. Bauer, and T. Fromherz, Unrolling the evolution kinetics of ordered SiGe islands via Ge surface diffusion, Phys. Rev. B. 88, 115311 (2013).

21. M. Grydlik, G. Langer, T. Fromherz, F. Schäffler and M. Brehm*, Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates, Nanotechnology 24, 105601 (2013).

20. M. Grydlik, M. Brehm and F. Schäffler, Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pits, Nanoscale Res. Lett. 7, 601 (2012).

19. P. Klenovský, M. Brehm, V. Křápek, E. Lausecker, D. Munzar, F. Hackl, H. Steiner, T. Fromherz, G. Bauer, J. Humlíček, Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition, Phys. Rev. B 86, 115305 (2012).

18. M. Grydlik, F. Boioli, H. Groiss, R. Gatti, M. Brehm, F. Montalenti, B. Devincre, F. Schäffler, L. Miglio, Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001), Appl. Phys. Lett. 101, 013119 (2012).

17. E. Lausecker, M. Grydlik, M. Brehm, I. Bergmair, M. Mühlberger, T. Fromherz, G. Bauer, Anisotropic remastering for reducing feature sizes on UV nanoimprint lithography replica molds, Nanotechnology 23, 165302 (2012).

16. G. Vastola, M. Grydlik, M. Brehm, F. Boioli, T. Fromherz, G. Bauer, F. Montalenti, L. Miglio, How pit facet inclination drives heteroepitaxial island positioning on patterned substrates, Phys. Rev. B 84, 155415 (2011).

15. R. Bergamaschini, M. Brehm, M. Grydlik, T. Fromherz, G. Bauer, F. Montalenti, Temperature-dependent consumption of the wetting layer following the appearance of stable islands in Ge/Si Stranski-Krastanow growth, Nanotechnology 22, 285704 (2011).

14. F. Boioli, R. Gatti, M. Grydlik, M. Brehm, F. Montalenti, L. Miglio, Assessing the delay of plastic relaxation onset in SiGe islands grown on pit-patterned Si(001) substrates, Appl. Phys. Lett. 99, 033106 (2011).

13. E. Lausecker, M. Brehm, M. Grydlik, F. Hackl, I. Bergmair, M.Mühlberger, T. Fromherz, F. Schäffler, G. Bauer, UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays, Appl. Phys. Lett. 98, 143101 (2011).

12. M. Brehm*, M. Grydlik, H. Groiss, F. Hackl, F. Schäffler, T. Fromherz, G. Bauer, The Influence of a Si Cap on Self-Organized SiGe Islands and the underlying Wetting Layer, J. Appl. Phys. 109, 123505 (2011).

11. M. Brehm*, H. Lichtenberger, T. Fromherz, G. Springholz, Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands, Nanoscale Res. Lett. 6, 70 (2011).

10. R. Gatti, F. Boioli, M. Grydlik, M. Brehm, H. Groiss, F. Montalenti, T. Fromherz, F. Schäffler, G. Bauer, L. Miglio, Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates, Appl. Phys. Lett. 98, 121908 (2011).

9. F. Hackl, M. Grydlik, M. Brehm, H. Groiss, F. Schäffler, T. Fromherz, G. Bauer, Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si(001) substrates, Nanotechnology 22, 165302 (2011).

8. M. Brehm*, M. Grydlik, F. Hackl, E. Lausecker, T. Fromherz, and G. Bauer, Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands, Nanoscale Res. Lett. 5, 1868 (2010).

7. M. Grydlik, M. Brehm, F. Hackl, H. Groiss, T. Fromherz, F. Schäffler and G. Bauer, Inverted Ge islands in {111} faceted Si pits — a novel approach towards SiGe islands with higher aspect ratio, New J. Phys. 12, 063002 (2010).

6. M. Brehm*, F. Montalenti, M. Grydlik, G. Vastola, H. Lichtenberger, N. Hrauda, M. J. Beck, T. Fromherz, F. Schäffler, L. Miglio, and G. Bauer, Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset, Phys. Rev. B, 80 205321 (2009).

5. C. Wang, J. Roither, R. Kirchschlager, M. V. Kovalenko, M. Brehm, T. Fromherz, Q. Kan, P. Tan, J. Liu, H. Chen, and W. Heiss, Enhanced infrared emission from colloidal HgTe nanocrystal quantum dots on silicon-on-insulator photonic crystals, Appl. Phys. Lett. 95, 053107 (2009).

4. M. Brehm, T. Suzuki, T. Fromherz, Z. Zhong, N. Hrauda, F. Hackl, J. Stangl, F. Schäffler and G. Bauer, Combined structural and photoluminescence study of SiGe islands on Si substrates: comparison with realistic energy level calculations, New Journal of Physics 11, 063021 (2009).

3. M. Brehm*, H. Lichtenberger, M. Grydlik, T. Fromherz, W. Jantsch, F. Schäffler, and G. Bauer, Quantitative determination of Ge profiles across SiGe wetting layers on Si (001), Appl. Phys. Lett. 93, 121901 (2008).

2. M. Brehm, T. Suzuki, Z. Zhong, T. Fromherz, J. Stangl, G. Hesser, S. Birner, F. Schäffler, G. Bauer, Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration, Microelectronics Journal 39, 485 (2008).

1. B. Mandl, J. Stangl, T. Martensson, M. Brehm, T. Fromherz, G. Bauer, L. Samuelson, W. Seifert, Metal free growth and characterization of InAs1-xPx nanowires, Physics of Semiconductors, Pts A and B 893, 97 (2007).