Go to JKU Homepage
{{ item.AUTOREN_ZITAT }}:
{{ item.TITEL }}{{ zitatInLang(item) }}
| 2010 - 2014 | PhD, Odessa I. I. Mechnikov National University, Odessa, Ukraine |
| 2008 - 2009 | M.Sc., Odessa I. I. Mechnikov National University, Odessa, Ukraine |
| 2004 - 2008 | B.Sc., Odessa I. I. Mechnikov National University, Odessa, Ukraine |
| 2017-2020 | PhD Researcher, Interdepartmental Physic-technical Center of Odessa I. I. Mechnikov National University |
| 2019 | DAAD Research Internship, Paul-Drude-Institute, Berlin, Germany |
| 10-11 / 2018 | Invited Researcher, Prof. D.S. Kim Nano-optics Lab of Seoul National University, Seoul, Republic of Korea |
| 2016-2017 | Postdoctoral Researcher, Institute of Electrical Engineering, Slovak Academy of Science, Bratislava, Slovakia |
| 2013-2015 | Graduate Researcher, Department of Experimental Physics, Odessa I. I. Mechnikov National University |
| 2011-2012 | Erasmus Mundus PhD Internship, Semiconductor Physics Department of Vilnius University, Vilnius, Lithuania |
| 05 / 2018 | Erasmus+ KA107 Scholarship, short-term research visit to Laboratory of Industrial Physics, Turku University, Finland |
| 2017-2018 | Head of Young researchers project, Ministry of Science and Education of Ukraine |
| 2016 - 2018 | Scholarship of Ministry of Science and Education of Ukraine for young researchers |
| 03-05 / 2013 | The National Scholarship Program of Ministry of Education and Science, Research and Sport of the Slovak Republic |
| 09/2011 - 06/2012 | Erasmus Mundus Scholarship for PhD students, Action 2 LOT 7 BMU |
Brytavskyi I., Hušeková K., Myndrul V., Pavlenko M., Coy E., Zaleski K., Gregušová D., Yate L., Smyntyna V., Iatsunskyi I., Effect of porous silicon substrate on structural, mechanical and optical properties of MOCVD and ALD ruthenium oxide nanolayers / Applied Surface Science, 2019, Vol. 471, pages 686-693.
Stoklas R., Gregušová D., Hasenöhrl S., Brytavskyi E., M. Ťapajna, Fröhlich K., Haščík Š., Gregor M., Kuzmík J., Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2gate dielectric grown by atomic layer deposition / Applied Surface Science, 2018, Vol. 461, pages 255–259.
Nonideal Heterojunctions for Image Sensors, Valentin Smyntyna, Vitaliy Borschak and Ievgen Brytavskyi, Monography, NOVA Publishers, New York, USA, ISBN: 978-1-53614-515-1, 2018
Kúdela R., Šoltýs J., Kučera M., Stoklas R., Gucmann F., Blaho M., Mičušík M., Pohorelec O., Gregor M., Brytavskyi I., Dobročka E., Gregušová D., Technology and application of in-situ AlOx layers on III-V semiconductors / Applied Surface Science, 2018, Vol. 461, pages 33–38.
Gaubas E., Brytavskyi I., Ceponis T., Jasiunas A., Kalesinskas V., Kovalevskij V., Meskauskaite D., Pavlov J., Remeikis V., Tamulaitis G., Tekorius A. In situ variations of carrier decay and proton induced luminescence characteristics in polycrystalline CdS / Journal of Applied Physics, 115, 243507 (2014).
Gaubas E., Brytavskyi I., Čeponis T., Kusakovskij J., and Tamulaitis G. Barrier Capacitance Characteristics of CdS-Cu2S Junction Structures / Thin Solid Films, Volume 531, 15 March 2013, Pages 131–136.
Gaubas E., Borschak V., Brytavskyi I., Čeponis T., Dobrovolskas D., Juršėnas S., Kusakovskij J., Smyntyna V., Tamulaitis G. and Tekorius A. Nonradiative and Radiative Recombination in CdS Polycrystalline Structures / Advances in Condensed Matter Physics, Volume 2013 (2013), Article ID 917543, 15 pages.
Eugenijus Gaubas, Ievgen Brytavskyi, Tomas Ceponis, Vidmantas Kalendra and Audrius Tekorius. Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures / Materials, 5(12), 2012, pages 2597–2608.
Johannes Kepler University Linz
Altenberger Straße 69
4040 Linz, Austria
