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Institute of Semiconductor and Solid State Physics
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Dr. Mahdi Hajlaoui.

Curriculum Vitae

August 2020 - present
Postdoctoral researcher at the Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Austria: Electronic band structure and epitaxial growth of Mn-based dilute magnetic semiconductors and topological systems using angle resolved photoelectron spectroscopy (ARPES) and solid source molecular beam epitaxy (SSMBE).

2018-2020
Postdoctoral researcher at the Technical University of Dortmund, in Germany: electronic band structure of c-GaN/AlN quantum wells and the antiferromagnetic semiconductors hexagonal MnTe.

2015-2018
Assistant professor of physics at the Carthage University, in Tunisia: teaching physics and research activities in oxide materials.

2013-2015
Postdoctoral researcher at the Synchrotron Soleil and C2N laboratory, in France: Electronic and structural properties of graphene multilayers on silicon carbide (SiC).

2010-2013
Ph.D in physics at the University of Paris Sud XI (Currently, University Paris Saclay), in France: Between metal and insulator: ultrafast dynamics in the topological insulator Bi2Te3 and microscopic domains at the Mott transition in V2O3.

2010
Master 2 of research in condensed matter physics at the University of Paris Sud XI (Currently, University Paris Saclay), in France. Master thesis: Angle-resolved photoelectron spectroscopy for the study of the metal-insulator transition in LaVS3.