Univ.-Prof. i.R. Dr. Friedrich Schäffler

Professor of Physics

Curriculum Vitae

1974 – 1980
Study of physics at Technical University of Munich (Germany)

Graduation as Dipl. Phys.
Diploma thesis: "Intersubband Spectroscopy on Si(001) inversion layers" at the institute of F. Koch

1980 – 1984
Graduate student at the Technische Universität München in the group of G. Abstreiter
Ph.D. thesis: "Electric-Field Induced Raman Scattering on cleaved GaAs(110) Surfaces"

1985 – 1986
Postdoc at the IBM Thomas J. Watson Research Lab. in Yorktown Heights, NY (USA)
Photoemission spectroscopy at the IBM beamline in the Brookhaven National Lab.

1987 – 1995
Staff member of the AEG/Daimler-Benz Research Center in Ulm, Germany, in the group "New Si Technologies"
Main activities: molecular beam epitaxy (MBE) and characterization of group-IV heterostructures; high-mobility field-effect transistors.

Univ. Prof. for Semiconductor Physics at the Johannes Kepler University in Linz/Austria

retired 2019

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Research Fields

  • Molecular beam epitaxy (MBE) of group IV heterostructures
  • Kinetic and strain-driven self-organization
  • Structural, electronic, optical and spin properties of Si-based heterostructures
  • Si/Si1-x-yGexCy devices
  • Transmission-Electron Microscopy (TEM)