Magnetic semiconductors are materials that exhibit both semiconducting and magnetic response. These materials are of great interest in the context of spintronics, as they allow the control of charge and spin current.
In our group we work with III-Nitride-based magnetic semiconductors, such as (Ga,Mn)N and (Ga,Fe)N dilute and phase-separated systems.

In particular we want to achieve:

• controlled reproducibility of the epitaxial growth processes
• accurate characterization of the material’s structural properties, and chemical composition, down to atomic scale
• controlled incorporation of magnetic elements: dilution/segregation/precipitation
• correlation of the structural, electrical, chemical properties with the magnetic response
• spin phenomena: spin polarization, spin transfer, etc.
• implementation into spintronic devices

Fig. 1: Modification of magnetic anisotropy in (Ga,Mn)N with an external electric field [14]

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