MOVPE is the method of choice in industry and research for the fabrication of high-quality epitaxial III-Nitrides films and heterostructures employed in devices. The optimization and control of growth parameters allows obtaining growth rates comparable to those obtained by molecular beam epitaxy (MBE).

Our research topics in the field of III-Nitrides are:

• optimization of ternary alloys (Al_xGa_1-xN, In_xGa_1-xN)
• improvement of the electronic properties by co-doping with Si (n-type ) and Mg (p-type)
• growth of functional heterostructures (LEDs, Bragg reflectors) for opto-electronic devices
• fabrication of magnetic semiconductors
• highly doped n-type systems for spin-orbitronics
• growth of low-dimensional structures doped with TM ions for magneto-optical measurements

Fig. 1: Graded Al_xGa_1-xN 3DES with high carrier density and high mobility [2]

1. H. Morkoc, Handbook of Nitride Semiconductor and Devices, Wiley-VCH (2008)
2. R. Adhikari et al., Appl. Phys. Lett. 108 (2016), opens an external URL in a new window
3. W. Stefanowicz et al., Phys. Rev. B 89 (2014), opens an external URL in a new window
4. A. Navarro-Quezada et al., Crystals 9 (2019) , opens an external URL in a new window