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Institute of Semiconductor and Solid State Physics
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MOVPE of III-Nitrides

MOVPE is the method of choice in industry and research for the fabrication of high-quality epitaxial III-Nitrides films and heterostructures employed in devices. The optimization and control of growth parameters allows obtaining growth rates comparable to those obtained by molecular beam epitaxy (MBE).

Our research topics in the field of III-Nitrides are:

  • optimization of ternary alloys (AlxGa1-xN, InxGa1-xN)
  • improvement of the electronic properties by co-doping with Si (n-type ) and Mg (p-type)
  • growth of functional heterostructures (LEDs, Bragg reflectors) for opto-electronic devices
  • fabrication of magnetic semiconductors
  • highly doped n-type systems for spin-orbitronics
  • growth of low-dimensional structures doped with TM ions for magneto-optical measurements
measurement graphs of 3DES

Fig. 1: Graded AlxGa1-xN 3DES with high carrier density and high mobility [2]