MOVPE is the method of choice in industry and research for the fabrication of high-quality epitaxial III-Nitrides films and heterostructures employed in devices. The optimization and control of growth parameters allows obtaining growth rates comparable to those obtained by molecular beam epitaxy (MBE).
Our research topics in the field of III-Nitrides are:
Fig. 1: Graded AlxGa1-xN 3DES with high carrier density and high mobility