In the emerging field of spin-orbitronics, spin-orbit coupling (SOC) is employed in both magnetic and non-magnetic materials to generate, exploit and detect spin currents. The generation of pure spin currents in functional semiconductors is a fundamental requirement for the implementation in the next generation of spin-based devices. Besides being strategic material systems for state-of-the-art optoelectronics and high power electronics, III-nitride semiconductors like GaN and Al_xGa_1-xN doped with magnetic elements have been widely studied as dilute magnetic semiconductors [1-4]. Moreover, with a non-negligible Rashba spin-orbit coupling parameter of (4.5+1.0) meV Å [5] and long spin relaxation times, n-GaN:Si is an outstanding workbench for the generation and manipulation of pure spin currents, which we studied and produced as reported in [6].

References

1. A. Bonanni et al. Phys. Rev. Lett. 101, 135502 (2008), opens an external URL in a new window
2. T. Devillers et al. Sci. Rep. 2, 722 (2012), opens an external URL in a new window
3. T. Dietl et al. Rev. Mod. Phys. 87, 1311 (2015), opens an external URL in a new window
4. R. Adhikari et al. Phys. Rev B 91, 205204 (2015), opens an external URL in a new window
5. W. Stefanowicz et al. Phys. Rev B 89, 205201 (2014), opens an external URL in a new window
6. R. Adhikari et al. Phys. Rev. B 94, 085205 (2016), opens an external URL in a new window