schließen

Dr. Eric Eugenio López

GAST

Curriculum Vitae

publications:
Irving Eduardo Cortes-Mestizo, Leticia Ithsmel Espinosa-Vega, Jose Angel Espinoza-Figueroa, Alejandro Cosneros-de-la-Rosa, Eric Eugenio-Lopez, Victor Hugo Mendez-Garcia, Edgar Briones, Joel Briones, Luis Zamora-Peredo, Ravindranath Droopad, Cristo Yee-Rendon.
Determination of the depletion layer width and effects on the foermation of double-2DEG in AlGaAs/GaAs heterostructures.
J. Vac. Sci. Technol. B 34 02L110 (2016); doi: 10.1116/1.4942898
L.I. Espinosa-Vega, E. Eugenio.Lopez, J.M. Gutierrez-Hernandez, A. Yu. Gorbatchev, S. Shimomura, Victor H. Mendez-Garcia.
Strain and Anisotropy Effects Studied in InAs/GaAs(221) Quantum Dots by Raman Spectroscopy
J. of Cryst. Growth 477 (2017) 212-216; doi: 10.1016/j.jcrysgro.2017.04.004
E. Eugenio-Lopez, M. Lopez-Lopez, A.Yu. Gorbatchev, L.I. Espinosa-Vega, I.E. Cortes-Mestizo, C.A. Mercado-Ornelas, A. Del Rio-De Santiago, Victor H. Mendez-Garcia
InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates
Physica E 95 (2018) 22-26, doi: 10.1016/j.physe.2017.08.013
E. Eugenio-Lopez, C.A. Mercado-Ornelas, P.K. Patil, I.E. Cortes-Mestizo, J.A. Espinoza-Figueroa, A.Y. Gorbatchev, S. Shimomura, L.I. Espinosa-Vega, V.H. Mendez-Garcia
Self-ordering of InAs nanostructures on (631)A/B GaAs substrates
Jpn. J. Appl. Phys 57, 025201 (2018), doi: 10.7567/jjap.57.025201

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