| Name, Institution | Tentative Title |
| Christophe Maleville, Soitec, France | Trends and roadmaps for engineered semiconductor substrates |
| Heike E. Riel, IBM Zürich, Switzerland | Group-III-V on Silicon microelectronics and photonics |
| Name, Institution | Tentative Title |
| Gabriel Aeppli, EPFL Lausanne, ETH Zürich, Switzerland | Device characterization using X-ray Microscopy and Spectroscopy at the Swiss Light Source |
| Erik Bakkers, TU Eindhoven, Netherlands | Direct bandgap emission from hexagonal Ge and SiGe alloys |
| Simona Binetti, Univ. Milano Bicocca, Italy | Infrared photoluminescence of defects in crystalline and multi-crystalline Si |
| Magnus Borgström, Lund University, Sweden | Nanowire tandem junction solar cells |
| Neil Curson, UCL, United Kingdom | Deterministic As impurities in Silicon |
| Anaïs Dreau, Univ. Montpellier, France | G-centers in Si as artificial atoms |
| Nicholas Grant, Univ. Warwick, United Kingdom | Gallium doped silicon for high efficiency silicon solar cells |
| Antonino La Magna, CNR-IMM Catania, Italy | Modelling of excimer laser annealing processes in future nanoscale devices |
| Chris Lew, University of Melbourne | Quantum sensing with spin defects in SiC devices |
| Dominique Mangelinck, CNRS, France | Challenges and issues for contacts in microelectronics |
| Felipe Murphy-Armando, Tyndall, Ireland | Direct-gap light-emission from point defects in Germanium |
| Takashi Nakayama, Chiba University, Japan | Resonance enhanced tunneling currents at Si-pn junctions; theoretical study |
| Tim Niewelt, Fraunhofer ISE, Germany | Establishing the true limit of silicon’s performance: a multi-institutional collaboration to redefine silicon’s carrier lifetime limit |
| Clemens Ostermaier, Infineon Technologies | Defect aspects of C-doped GaN buffers |
| Fabrizio Rovaris, NOMATEN centre of excellence, Poland | Simulation of dislocation dynamics in the presence of surfaces |
| Jan Schmidt, ISFH, Germany | Surface passivation of crystalline silicon solar cells: Past, present and future |
| Alexander L. Shluger, UCL, United Kingdom | Defects in oxides in Electronic devices |
| Hans Sigg, Paul Scherrer Institut, Villigen, Switzerland | Recent progress on group-IV Lasers on Silicon |
| Jonatan Slotte, Aalto University & University of Helsinki, Finland | Positron Annihilation spectroscopy open volume defects in highly n-type doped Ge and GeSn layers |
| Michelle Vaqueiro Contreras, UNSW, Australia | Graphene oxides as passivators for silicon surfaces |
| Jan Vobecky, Hitachi, ABB Power Grids, Switzerland | Impact of defect engineering on high power devices for environmental free technologies |
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