F. Hackl, M. Grydlik, Petr Klenovský, F. Schäffler, T. Fromherz, M. Brehm
Different recombination paths can strongly influence the optical properties of quantum dots. The green, red, and blue surfaces indicate the probability densities of heavy‐hole, Δz, and Δxy electron wave‐functions, respectively, as discussed in article number 1800259, opens an external URL in a new window by Florian Hackl, Thomas Fromherz, Moritz Brehm, and co‐workers.
Lukas Spindlberger won the 2nd place of the Best Poster Award at the Euro-MBE 2019 in Lenggries, Germany (February 17-20, 2019) with his poster entitled "Post-growth optimization of defect-enhanced Ge quantum dots towards Si-based laser sources for on-chip data communication"
by Florian Hackl, Martyna Grydlik, Petr Klenovský, Friedrich Schäffler, Thomas Fromherz, and Moritz Brehm
was published in the venerable journal Annalen der Physik,
We have identified different recombination paths in Ge/Si quantum dots that contribute significantly to luminescence line broadening in these structures. Using time-resolved spectroscopy, we highlight that the various carrier transition paths are differently influenced by non-radiative carrier recombination such as e.g. Auger-recombination.
by H. Groiss, L. Spindlberger, P. Oberhumer, F. Schäffler, T. Fromherz, M. Grydlik and M. Brehm,
has been chosen for the 2017 Semiconductor Science and Technology (SST) highlight collection.
Our topical review "Site-controlled and advanced epitaxial Ge/Si quantum dots: fabrication, properties, and applications" was included in the Highlights of Nanotechnology 2017, opens an external URL in a new window
This collection includes outstanding articles and Topical Reviews published in the journal during 2017. These articles were selected on the basis of a range of criteria including referee endorsements, presentation of outstanding research and popularity with our online readership.
The articles will be free to read until the end of December 2018. Our article is open access anyways, thanks to Funding from the FWF.
The article: Room-Temperature Group-IV LED Based on Defect-Enhanced Ge Quantum Dots can be accessed here:
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